Pressure effects on the growth of Sb2Te3 thin films processed by DC and RF sputtering
Main Article Content
Abstract
In this work, are compare and analyze the surface structure, morphology and electrical properties of antimony telluride (Sb2Te3) thin films grown by Direct Current (DC) and Radio Frequency (RF) magnetron sputtering system, with the variation of deposit pressure (Pd) from 5 to 15 mTorr. The Sb2Te3 thin films were grown with a magnetron power of 60 W, a substrate temperature of 200 °C and deposited time of 60 minutes for all samples. Profilometry measurements, X-ray Diffraction (XRD), morphology by Scanning Electron Microscope (SEM), Energy Dispersive Spectrometry (EDS) and resistivity were carried out on the Sb2Te3 thin films. XRD results show that the Sb2Te3 thin films prepared by DC sputtering system have a higher crystalline quality respect to thin films deposited by RF sputtering and the structural properties improved by the decreasing of the deposition pressure. Morphology results revealed that when the work pressure in both sputtering systems decreased to 5 mTorr, the grains are more compacted. EDS analyses show that the atomic composition is approximately 35% at of Te and 65% at of Sb in both sputtering systems. Finally, for DC sputtering or RF sputtering systems the resistivity of the thin films decreases is close to 5.8x10-4 ohm-cm.
Downloads
Article Details
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Author(s) and co-author(s) jointly and severally represent and warrant that the Article is original with the author(s) and does not infringe any copyright or violate any other right of any third parties, and that the Article has not been published elsewhere. Author(s) agree to the terms that the IJRDO Journal will have the full right to remove the published article on any misconduct found in the published article.
References
2. Romeo A, Bätzner DL, Zogg H, Tiwari AN. A comparison of the vacuum evaporated CdTe for substrate and superstrate solar cells. 1–4. Conference: 16th European Photovoltaic Solar Energy Conference and Exhibition. May 2000.
3. Bätzner DL, Wendt R, Romeo A, Zogg H, Tiwari AN. A study of the back contacts on CdTe/CdS solar cells. Thin Solid Films [Internet]. 2000;361–362:463–7. Available from: http://www.sciencedirect.com/science/article/pii/S0040609099008421
4. Bendt G, Schulz S, Zastrow S, Nielsch K. Single-Source Precursor-Based Deposition of Sb2Te3 Films by MOCVD**. Chem Vap Depos [Internet]. 2013;19(7-8–9):235–41. Available from: https://onlinelibrary.wiley.com/doi/abs/10.1002/cvde.201207044
5. Zastrow S, Gooth J, Boehnert T, Heiderich S, Toellner W, Heimann S, et al. Thermoelectric transport and Hall measurements of low defect Sb2Te3 thin films grown by atomic layer deposition. Semicond Sci Technol [Internet]. {IOP} Publishing; 2013 Feb;28(3):35010. Available from: https://doi.org/10.1088%2F0268-1242%2F28%2F3%2F035010
6. Aboulfarah B, Sayah D, Mzerd A, Giani A, Boyer A. MOCVD growth of Bi2Te3-Sb2Te3 layers : Effect of growth parameters on the electrical and thermoelectrical properties. Moroccan J Condens Matter [Internet]. 2011;3(0). Available from: https://revues.imist.ma/index.php?journal=MJCM&page=article&op=view&path%5B%5D=67
7. Rostek R, Kottmeier J, Kratschmer M, Blackburn G, Goldschmidtböing F, Kröner M, et al. Thermoelectric Characterization of Electrochemically Deposited Bi2Te3 Films Accounting for the Presence of Conductive Seed Layers. J Electrochem Soc [Internet]. 2013;160(9):D408–16. Available from: http://jes.ecsdl.org/content/160/9/D408.abstract
8. Yoo I-J, Song Y, Chan Lim D, Myung N V, Lee KH, Oh M, et al. Thermoelectric characteristics of Sb2Te3 thin films formed via surfactant-assisted electrodeposition. J Mater Chem A [Internet]. The Royal Society of Chemistry; 2013;1(17):5430–5. Available from: http://dx.doi.org/10.1039/C3TA01631E
9. Bin Lv Songbai Hu WLXDLFJZLWYCBL, Lei Z. Preparation and Characterization of Sb2Te3 Thin Films by Coevaporation. Int J Photoenergy [Internet]. {hindawi} Publishing; 2010 Jun;2010:4. Available from: https://www.hindawi.com/journals/ijp/2010/476589/cta/
10. Fan P, Zheng Z-H, Liang G-X, Zhang D-P, Cai X-M. Thermoelectric characterization of ion beam sputtered Sb2Te3 thin films. J Alloys Compd [Internet]. 2010;505(1):278–80. Available from: http://www.sciencedirect.com/science/article/pii/S092583881001443X
11. Chen T, Fan P, Zheng Z, Zhang D, Cai X, Liang G. Influence of Substrate Temperature on Structural and Thermoelectric Properties of Antimony Telluride Thin Films Fabricated by RF and DC Cosputtering. 2012;41(4):679–83.
12. Fang B, Zeng Z, Yan X, Hu Z. Effects of annealing on thermoelectric properties of Sb2Te3 thin films prepared by radio frequency magnetron sputtering. J Mater Sci Mater Electron [Internet]. 2013;24(4):1105–11. Available from: https://doi.org/10.1007/s10854-012-0888-1
13. Eliana M.F. Vieira, Joana Figueira, Ana L. Pires, Jose Grilo, Manuel F. Silva, Andre M. Pereira, Luis M. Goncalves. Enhanced thermoelectric properties of Sb2Te3 and Bi2Te3 films for flexible thermal sensors. Journal of Alloys and Compounds. 774 (2019) 1102-1116. https://doi.org/10.1016/j.jallcom.2018.09.324
14. Shengfei Shen, Wei Zhu, Yuan Deng, Huaizhou Zhao, Yuncheng Peng, Chuanjun Wang. Enhancing thermoelectric properties of Sb2Te3 flexible thin film through microstructure control and crystal preferential orientation engineering. Applied Surface Science. Volume 341 (2015). http://dx.doi.org/10.1016/j.apsusc.2017.04.074